用电化学沉积方法制备钴掺杂的氧化锌薄膜及其光学性质

通过选用乌洛托品作为络合剂,采用电化学沉积的方法成功地制备出钴掺杂的氧化锌薄膜。通过对样品的XRD表征,得出生长的样品为ZnO纤锌矿结构,并没有其他杂相峰,即没有出现分相;通过对样品XPS的分析显示Co离子在薄膜中以+2价的形式存在;为进一步验证Co²⁺离子进入ZnO的晶格,对掺杂不同Co²⁺浓度的样品进行PL谱的测量,从发光光谱上可以看出随着掺杂Co²⁺浓度的增加,带隙逐渐变窄,发光峰位红移,证明Co²⁺部分取代了Zn²⁺而进入了ZnO晶格中。

Fabrication and Optical Properties of Co Doped ZnO Thin Films Grown by Electrodeposition

Recently, diluted magnetic semiconductors (DMSs) have attracted a lot of attention because of their potential technological applications in optoelectronic, magnetoelectronic, and microwave devices. Ⅱ-Ⅵ semiconductors such as ZnO are attractive as DMS candidates because the solubility limit of magnetic ions is extremely high. Cobalt is the magnetic impurity most soluble in ZnO. Therefore, numerous experimental groups have tried to grow ZnO semiconductors doped with ferromagnetic transition metals. But there is few report of electrodeposition applied to grow Co doped ZnO semiconductors. That is due to the ferromagnetic transition metal ions are difficult to dope into the ZnO crystal lattice successfully. In this paper, the Co doped ZnO thin films were prepared by electrdeposition with adding hexamethylenetetramine. The optical properties of the Co-doped ZnOare also studied.