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Introducing CdS into two- and three-dimensional photonic crystals
Authors:Hanaizumi  Osamu  Saito  Makoto  Ohtera  Yasuo  Kawakami  Shojiro  Yano  Satoshi  Segawa  Yusaburo  Kuramochi  Eiichi  Tamamura  Toshiaki  Oku  Satoshi  Ozawa  Akira
Institution:(1) Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan;(2) Present address: Department of Electronic Engineering, Faculty of Engineering, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, 376-8515, Japan;(3) New Industry Creation Hatchery Center, Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan;(4) Photodynamics Research Center, The Institute of Physical and Chemical Research, 19-1399 Koeji, Nagamachi, Aoba-ku, Sendai, 980-0868, Japan;(5) NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan;(6) NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan;(7) NTT Advance Technology, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan
Abstract:SiO2/air three-dimensional (3D) periodic structures were fabricated by removing Si layers partially from Si/SiO2 3D photonic crystals (PhCs) formed by using autocloning. CdS/SiO2 3D periodic structures were formed by introducing CdS into the SiO2/air structures by the TEA method and photoluminescence (PL) was observed from the introduced CdS. TiO2/air/CdS two-dimensional (2D) PhCs were also fabricated by introducing CdS into the voids of TiO2/air 2D periodic structures, in which SiO2 layers were partially etched out from TiO2/SiO2 2D PhCs fabricated by using autocloning. PL radiating normal to the surface was measured and large polarization dependence was observed.
Keywords:autocloning  Cds  photoluminescence  photonic crystal  TEA method
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