Laser-induced damage in InSb at 1.06 μm wavelength—a comparative study with Ge, Si and GaAs |
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| Authors: | AV Kuanr SK Bansal GP Srivastava |
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| Institution: | aAVK is in the II.Physikalisches Institut, Universität zu Köln, Zülpicher St. 77, D-50937, Köln, Germany;bSKB is in Ramjas College, University of Delhi, Delhi 110 007, India;cGPS is in the Department of Electronic Science, South Delhi Campus, University of Delhi, New Delhi 100 021, India |
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| Abstract: | This paper deals with the study of laser-induced damage in n-type single crystal InSb irradiated with a Nd: glass laser of 1.06 μm wavelength and 300 μs pulse duration. Samples of different surface quality were prepared by mechanical lapping and polishing by diamond paste. Evolution of damage morphological features observed at different power densities is discussed. Damage threshold results are analysed in terms of a thermal model taking into account the temperature dependence of various physical parameters and using the finite difference method of calculation. A comparative study of laser induced damage in InSb, Ge, Si and GaAs irradiated under similar conditions is also presented. |
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| Keywords: | lasers (Nd: glass) laser damage threshold (LDT) indium antimonide (InSb) damage morphology |
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