| 用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移 |
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| 引用本文： | 李先皇,陆昉,孙恒慧. 用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移[J]. 物理学报, 1993, 42(7): 1153-1159. DOI: 10.7498/aps.42.1153 |
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| 作者姓名： | 李先皇 陆昉 孙恒慧 |
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| 作者单位： | 复旦大学物理系,上海200433 |
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| 基金项目： | 国家自然科学基金资助的课题 |
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| 摘 要： | 应变的GexSi1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge0.25Si0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge0.25Si0.75/S关键词：
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| 关 键 词： | 赝单晶 量子阱 价带 深能级瞬态谱 |
| 收稿时间： | 1992-09-15 |
VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY |
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| LI XIAN-HUANG,LU FANG and SUN HENG-HUI. VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J]. Acta Physica Sinica, 1993, 42(7): 1153-1159. DOI: 10.7498/aps.42.1153 |
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| Authors: | LI XIAN-HUANG LU FANG SUN HENG-HUI |
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| Abstract: | The band offset between strained GexSi1-x and unstrained Si is mainly due to the valence band offset ΔEv. The thermal emission energy from a quantum well is related to the appropriate band offset. The single quantum well (p type Si/Ge0.25Si0.75/Si) samples were grown by molecular beam epitaxy (MBE), the width of quantum well is 15nm. Deep leve transient spectroscopy (DLTS) measurement have been used to study the valence band offset. After considering the band bending due to the electric field and the first subband energy, the valence band offset ΔEv of the single quantum well was estimated as about 0.19eV, it is in reasonable agreement with theoretical results. The same and difference of emission and capture processess between quantum well and deep level defects were discussed. |
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