| 镓在裸Si系和SiO2/Si系掺杂效应 |
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| 引用本文： | 刘秀喜,薛成山,孙瑛,赵富贤,王显明,李玉国.镓在裸Si系和SiO2/Si系掺杂效应[J].物理化学学报,1997,13(2):153-157. |
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| 作者姓名： | 刘秀喜 薛成山 孙瑛 赵富贤 王显明 李玉国 |
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| 作者单位： | Semiconductor Research Institute,Shandong Normal University,Jinan 250014 |
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| 摘 要： |
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| 关 键 词： | 开管扩镓 裸Si系 SiO2/Si系 掺杂效应 |
| 收稿时间： | 1996-05-01 |
| 修稿时间： | 1996-09-12 |
Gallium Doping Effect in Bare Silicon System and SiO_2/Si System |
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| Liu Xiu-Xi,Xue Cheng-Shan,Sun Ying,Zhao Fu-Xian,Wang Xian-Ming,Li Yu-Guo.Gallium Doping Effect in Bare Silicon System and SiO_2/Si System[J].Acta Physico-Chimica Sinica,1997,13(2):153-157. |
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| Authors: | Liu Xiu-Xi Xue Cheng-Shan Sun Ying Zhao Fu-Xian Wang Xian-Ming Li Yu-Guo |
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| Institution: | Semiconductor Research Institute,Shandong Normal University,Jinan 250014 |
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| Abstract: | Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics . |
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| Keywords: | Open-tube diffusion Bare silicon system SiO_2/Si system Doping effect |
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