Multi-sideband Generation in a Femtosecond Cr4+:YAG Laser |
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| Authors: | Yuzo Ishida Kazunori Naganuma Hidehiko Kamada |
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| Affiliation: | (1) NTT Opto-electronics Laboratories, 3-1 Morinosato, Atsugi, 243-0198, Japan;(2) NTT Basic Research Laboratories, 3-1, Morinosato, Atsugi, 243-0198, Japan;(3) Present address: Toyama National College of Maritime Technology, 1-2, Neriya, Ebie, Shinminato-shi, Toyama 933-0293, Japan |
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| Abstract: | We describe the behavior of multi-sidebands in a self-mode-locked femtosecond Cr4+:YAG laser operating near 1.54 μm. Stokes and anti-Stokes sideband components are extended over 20 THz around the center frequency. An interesting feature here is that when the spectral width of the mode-locked pulse is increased, the specific Stokes sideband near 1.65 μm (a shift of 13.5 THz) is strongly enhanced due to an induced-Raman process in the laser rod. The measured frequency shifts for all sidebands are well explained by four-wave-mixing processes in the laser rod, accompanied by the resonance effect of the soliton and dispersive wave, both of which are affected mainly by cavity dispersions. |
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| Keywords: | multi-sideb Raman four-wave-mixing femtosecond solid-state laser |
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