Search for giant Franz-Keldysh-like effects in GaSe and other layered semiconductors |
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| Authors: | P. E. Sulewski E. Bucher N. Stücheli C. S. Oglesby K. Friemelt M. Vögt J. R. Baumann Ch. Kloc |
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| Affiliation: | (1) AT & T Bell Laboratories Murray Hill, 07974, NJ, USA;(2) Department of Physics, University of Konstanz, P.O. Box 5500, W-7750 Konstanz, Fed. Rep. Germany;(3) Present address: Department of Quantum Electronics, Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland |
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| Abstract: | Recently, an anomalously large redshift of the absorption edge with electric field was claimed for  -GaSe1–xSx layered crystals. We have studied Bridgman grown  -GaSe crystals as well as vapor transport grown -GaS, and 2H-WSe2. While we have observed a shift in the absorption edge for -GaSe similar to that reported in previous work, our results demonstrate that the redshift arises from Joule heating, and is thus temperature induced, rather than intrinsic. For -GaS, much larger resistivities virtually eliminate Joule heating, and our measurements of the electric field induced absorption edge shift yield an estimated upper limit of approximately 0.04 meV · cm/kV for a field of 2.4×103 kV/cm, in good agreement with the theoretical value expected for the Franz-Keldysh effect.Also at University of Konstanz |
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| Keywords: | 78.20 Jq 78.65 Gb 42.70 Fh |
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