Energy-selective charging of type-II GaSb/GaAs quantum dots |
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Authors: | M Geller C Kapteyn E Stock L Müller-Kirsch R Heitz D Bimberg |
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Institution: | Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany |
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Abstract: | The hole confinement in type-II self-organized GaSb/GaAs quantum dots (QDs) was investigated by combining optical excitation and time-resolved capacitance spectroscopy. The experimental results indicate energy-selective charging even for type-II QDs. With increasing excitation energy the apparent hole activation energy decreases, which is attributed to light absorption in sub-ensembles of QDs with decreasing hole localization. The large localization energy of about 450 meV and the possibility of optical-multiplexing makes type-II GaSb/GaAs QDs a potential material system for QD memory concepts. |
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Keywords: | Author Keywords: DLTS Quantum dots Capacitance spectroscopy Optical charging |
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