掺杂TiO2的La2/3Ba1/3MnO3电输运与磁电阻特性

通过固相反应法制备了(1-x)La2/3Ba1/3MnO3 xTiO2(x=0％～5％)多晶陶瓷样品，实验发现，随着TiO2掺杂量的增加，电阻率明显增大，金属绝缘相转变温度Tp值下降．通过室温(300K)和低温(78K)下不同磁场的磁电阻计算表明，适量的TiO2掺杂会明显提高材料的磁电阻性能；在1T磁场下，TiO2掺杂量为1％的样品室温磁电阻达到12％，这是未掺杂La2/3Ba1/3MnO3相同条件下的3倍，为磁电阻传感器研究提供了实验依据。

Transport and Magnetoresistance Properties in TiO2-Doped La2/3 Ba1/3 MnO3

(1-x)La_(2/3)Ba_(1/3)MnO_3 xTiO_2(x=0%-5%) polycrystalline ceramic samples were prepared by solid-state-reaction method. It is found that with increasing TiO_2 doping level, the resistivity increases obviously, and the metal-insulator transition temperature T_p decreases. The magnetoresistances measured in different magnetic fields at room temperature(300 K) and low temperature (78 K) show that moderate TiO_2 dopant can enhance the magnetoresistance obviously. The magnetoresistance for the sample with 1% TiO_2 dopant in 1T magnetic field reaches 12% at room temperature, which is 3 times larger than undoped La_(2/3)Ba_(1/3)MnO_(3) under the same condition,which provides the experimental proof for the magnetoresistance sensor research.