Determination of the optical constants of metals and semiconductors by combining ellipsometry with electron spectroscopy microscopy and X-ray specular reflection analysis

The optical constants n(λ) and k(λ) of metals and semiconductors can be determined by spectroellipsometry, however, their apparent values are considerably affected by the roughness and oxide overlayer thickness dof the sample. Aluminium thin film samples of high perfection and very low roughness (<1 nm) have been studied by cross-disciplinary experimental methods: X-ray specular reflection analysis for determining the structure and thickness of the natural (hydrated) oxide overlayer and roughness of the substrate; plasmon electron energy loss spectroscopy supplied d. For calibration of the d measurements a special thin film multilayer system was developed, suitable for preparing cross-sectional samples for resolution transmission electron microscopy. Knowing the roughness and d-data, the optical constants n(λ) and k(λ) of aluminium were determined by spectroellipsometry in the spectral range λ=365–633 nm. Experimental results and a nomogram are presented for evaluating n(λ) and k(λ). The dependence of the ellipsometric optical constants on roughness and d is discussed. Very good agreement of the optical constants with the corrected ellipsometric results of Blanco and the synchrotron spectroscopy data of Hagemann was found. The cross-disciplinary methods can be applied to metals and semiconductors covered with an overlayer.