SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime |
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| Authors: | Y. Kudriavtsev A. Hernandez R. Asomoza S. Gallardo M. Lopez K. Moiseev |
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| Affiliation: | 1. Departamento Ingeniería Eléctrica ‐ SEES, Cinvestav‐IPN, Mexico City, Mexico;2. Departamento Fisica, Cinvestav‐IPN, Mexico City, Mexico;3. Ioffe Physic‐Technical Institute, S‐Petersburg, Russia |
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| Abstract: | ![]()
We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to ?150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd. |
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| Keywords: | SIMS depth resolution surface roughness surface segregation |
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