Interface structure and misfit relaxation in YBa2Cu3O7‐δ/PrBa2Cu3O7‐δ heterostructures on SrTiO3(001) substrates |
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| Authors: | Shao‐Bo Mi |
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| Institution: | 1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, , Shenyang, 110016 China;2. International Center for Dielectric Research, Xi'an Jiaotong University, , Xi'an, 710049 China |
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| Abstract: | Structural properties of YBa2Cu3O7‐δ/PrBa2Cu3O7‐δ heterointerfaces have been investigated by aberration‐corrected electron microscopy. Experimental evidence shows that c‐axis‐oriented YBa2Cu3O7‐δ/PrBa2Cu3O7‐δ heterostructures with atomically sharp interface epitaxially grow on SrTiO3(001) substrates. In terms of the contrast analysis, no apparent interdiffusion between YBa2Cu3O7‐δ and PrBa2Cu3O7‐δ occurs at the interface. In addition, stand‐off misfit dislocations and planar faults appear within PrBa2Cu3O7‐δ layer near the interface. Both misfit dislocations and interfacial dislocations resulting from the termination of planar faults contribute to misfit relaxation at the YBa2Cu3O7‐δ/PrBa2Cu3O7‐δ interface. The defect configuration of planar faults and stand‐off misfit dislocations is explored. Copyright © 2013 John Wiley & Sons, Ltd. |
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| Keywords: | thin films interfaces electron microscopy defects |
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