Topography and field effects in the inner side of microvia hole using ToF‐SIMS |
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| Authors: | Jae Cheol Lee Yong Koo Kyoung In Yong Song Jae Woo Lee Young Sik Shin Jin Seok Kim Shin‐ichi Iida |
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| Institution: | 1. Analytical Engineering Group, Platform Technology Lab, Samsung Advanced Institute of Technology, , Yongin‐Si, Gyeonggi‐Do, 446‐712 South Korea;2. BGA Team, Samsung Electro‐Mechanics, , Yeongi‐gun, Chungcheongnam‐do, 339‐702 South Korea;3. Market Development Department, ULVAC‐PHI, Inc., , Chigasaki, 253‐8522 Japan |
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| Abstract: | We have developed a simple and powerful method, which is called ‘angled sample holder method’, to characterize a topographic structured sample such as microsized via hole of ball grid array using time‐of‐flight SIMS. The diameter of via holes was 100 µm and the depth was 70 µm. To remove the shaded area by incidence primary ion beam and to extract secondary ions from the bottom of a via hole, several types of angled sample holders with compensation steering plate were applied on the basis of simulation results using SIMION code. And the analyses using angled sample holder method enabled us to characterize the bottom and side wall of a via hole in clear. Copyright © 2014 John Wiley & Sons, Ltd. |
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| Keywords: | secondary ion trajectory topographic structured sample angled sample holder via hole ToF‐SIMS |
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