Interlaboratory study comparing analyses of simulated angle‐resolved X‐ray photoelectron spectroscopy data

An interlaboratory study has been conducted to determine the following: (i) the similarities and differences of film thicknesses and composition profiles obtained from analyses of simulated angle‐resolved X‐ray photoelectron spectroscopy (ARXPS) data by different analysts using different algorithms for data analysis, and (ii) the effects of two assumptions commonly made in data‐analysis algorithms for ARXPS on derived film thicknesses and composition profiles. The analyzed data were generated by the National Institute of Standards and Technology Database for the Simulation of Electron Spectra for Surface Analysis, (SESSA) which provides a simple way to study the influence of the aforementioned effects on compositional depth profile reconstruction. Sets of simulated ARXPS data were produced for thin films of SiO₂, SiON, HfO₂, and HfON of varying thicknesses on a Si substrate. For some HfON films, the N concentration varied with depth. Eleven groups participated in the round robin study. The majority (eight) employed a commercial ARXPS instrument in which the angular distribution is measured for a fixed sample geometry, in contrast to conventional ARXPS in which the sample is tilted for angular variation. The average deviations between the reported average depth, film thickness, and amount of material typically varied between 20% and 30% but were considerably larger, between 30% and 80%, for some cases. The average errors were generally larger for simulations that included elastic scattering and the finite analyzer‐acceptance angle (realistic conditions) than those for simulations that neglected elastic scattering and the finite analyzer‐acceptance angle (simplified conditions). The retrieved N depth profiles were quantitatively different from the true depth profiles and showed substantial variability among the group of members who used the same instrument and analysis software. Copyright © 2014 John Wiley & Sons, Ltd.