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Terahertz plasmon-emitting graphene-channel transistor
Institution:1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia;2. Research Institute of Electrical Communication, Tohoku University, 980-8577, Sendai, Japan;3. Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, 105005, Moscow, Russia;1. LEVRES Laboratory, Faculty of Exact Sciences, University of Echahid Hamma Lakhdar EL Oued, BP 789, El Oued, 39000, Algeria;2. Department of Electronics and Telecommunications, Faculty of Sciences and Technology, University of 8 mai 1945 Guelma, 24000, Guelma, Algeria;1. Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon;2. Laboratoire des Matériaux et Environnement (LAME), UFR-SEA, Université de Ouagadougou, BP 7021, Ouaga 03, Burkina Faso;1. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580, Japan;2. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;3. Institute of Ultra-High Frequency Semiconductor Electronics of RAS, Moscow 117105, Russia;4. Center for Photonics and 2-D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia;5. Center for Photonics and Infrared Technology, Bauman Moscow State Technical University, Moscow 105005, Russia;6. Institute for Physics of Microstructures of RAS, Nizhny Novgorod 603950, Russia;7. Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA;8. Department of ECS Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;9. Electronics of the Future, Inc., Vienna, VA 22181, USA;1. V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia;2. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia;3. Belarusian State University, Minsk, Belarus;4. Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia;5. Institute of Radio-Engineering and Electronics of RAS, Moscow, Russia;1. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Reymonta 25 St., 30-059, Krakow, Poland;2. Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu Plentas 19, LT50254, Kaunas, Lithuania;3. Institute of Chemistry, University of Silesia, 9 Szkolna St., 40-006, Katowice, Poland
Abstract:In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.
Keywords:Terahertz  Plasmon  Graphene  Transistor
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