Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比，验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律，与国内报道的传统MES-HEMT器件随温度退化程度对比，得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的，证明栅介质减小了引关键词：原子层淀积AlGaN/GaNMOS-HEMT器件温度特性

Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric

A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with atomic layer deposition (ALD) of 10nm Al₂O₃ gate dielectric is manufactured. The superiorities in saturation current and leakage current of the novel MOS-HEMT device are verified by comparison of the MOS-HEMT with traditional MES-HEMT devices at room temperature. The statistical analysis of the features of temperature variation of the device characteristics in the 30—180℃ range, which shows the distinction in degration degree by temperature on the two kinds of devices, is also illustrated. The conclusion that the device saturation current and the transconductance degradations are mainly caused by transport characteristic degradation is reached at. Thus, the conclusion can be drawn that all statistical and analytical results witness the significant role played by the reduced surface states in the surface of the AlGaN in optimizing the characteristics of the device.