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Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance |
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| Authors: | T. Sugaya T. Yamane M. Ogura K. Komori K. Yonei |
| Affiliation: | a National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba 305-8568, Japan;b CREST, Japan Science and Technology Corporation (JST), 4-1-8, Honmachi, Kawaguchi 332-0012, Japan;c Shibaura Institute of Technology, 3-9-14, Shibaura, Minato-ku, Tokyo 108-8548, Japan |
| Abstract: | Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FET) are realized by selective molecular beam epitaxy. The pseudomorphic QWR-FET has a negative differential resistance (NDR) effect with a low source–drain voltage (0.3 V). The NDR spectra are clearly observed in the 50–220 K temperature range. The operating current of the pseudomorphic QWR-FET is twice that of a lattice-matched QWR-FET, and this is thought to be due to the higher electron mobility. |
| Keywords: | Low dimensional structure Nanostructures Molecular beam epitaxy Selective epitaxy Semiconducting indium compounds Negative differential resistance |
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