Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method |
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| Institution: | 1. Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki 885-8567, Japan;2. Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan;1. Istanbul University, Faculty of Science, Department of Physics, Vezneciler, 34134, Istanbul, Turkey;2. Istanbul Kultur University, Department of Physics, Atakoy Yerleskesi, 34156, Bakirkoy, Istanbul, Turkey;3. Oral Roberts University, Department of Chemistry and Biology, Tulsa, OK 74171, USA;4. Kao Specialties Americas, LLC, 243 Woodbine St., High Point, NC 27260, USA;5. Potsdam University, Department of Chemistry, Karl-Liebknecht-Str. 24-25, D-14476 Potsdam (Golm), Germany;1. Laboratoire de Physico-Chimie des Matériaux Inorganiques, Université Hassan II Casablanca, Marocco;2. Institut Carnot CIRIMAT, CNRS Université de Toulouse, 118 route de Narbonne, 31062 Toulouse Cedex 9, France |
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| Abstract: | Structural, electrical and optical properties of Sb-doped CuInS2 thin films grown by single source thermal evaporation method were studied. The films were annealed from 100 to 500 °C in air after the evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS2 films were successfully obtained by annealing above 200 °C. This temperature was lower than that of non-doped CuInS2 films. Furthermore, We found that the Sb-doped CuInS2 thin films became close to stoichiometry in comparison with non-doped CuInS2 thin films. The Sb-doped samples annealed above 200 °C has bandgap energy of 1.43–1.50 eV. |
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