Bulk GaN single crystals: growth conditions by flux method |
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| Affiliation: | 1. Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People''s Republic of China;2. Department of Applied Sciences, University of Science and Technology Beijing, Beijing 100083, People''s Republic of China;1. CINTRA – CNRS/NTU/Thales, UMI 3288, 50 Nanyang Drive, 637553, Singapore;2. School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore;3. School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore;4. Data Storage Institute, Agency for Science Technology and Research (A-STAR), 5 Engineering Drive 1, 117608, Singapore;1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;3. GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan |
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| Abstract: | ![]()
Hexagonal GaN platelet crystals with a size of 1–4 mm have been grown by a Li-based flux method. The influence of growth conditions such as the molar ratio of starting materials, temperature, pressure, the position of Li3N in the crucible on the growth of GaN single crystals was studied. The quality of GaN single crystal was checked by optical microscope and X-ray rocking curve. |
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