Size effect of the longitudinal magnetoresistance of thin films of n- type Ge

In a study of the longitudinal magnetoresistance as a function of the magnetic field in samples of n-type Ge of various thicknesses at 300°K and 77°K, the surface of the samples was oriented parallel to the (001) plane. The directions of the current and the magnetic field were along either the <100> direction or the <110> direction. As the thickness of the samples was reduced, regardless of the orientation of the current and the magnetic field with respect to the crystallographic directions, a decrease was observed in the magnetoresistance over the entire range of magnetic fields studied, 1–280 kOe. The experimental results are attributed to a screening-length size effect and to “sliding” orbits in the enriched surface layers, which lead to an increase in the electron mobility in a strong magnetic field.