Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TAG:Ce phosphors

Cerium-doped terbium aluminum garnet phosphors, Tb₃Al₅O₁₂:Ce³⁺ (TAG:Ce³⁺), were prepared with different methods: co-precipitation (CP), half dry-half wet (HDHW), sol-combustion (SC) and Pechini method plus conventional solid state reaction (SS) method. Comparative study on the phase-formation, particle size, morphologies and luminescent characteristics of the phosphors synthesized with different methods was carried out by means of XRD, FE-SEM and photoluminescence (PL) analysis and SC method was confirmed by the comparison of the results to be an easy and an effective process for preparing efficient and nano-sized Tb₃Al₅O₁₂:Ce³⁺ phosphors. Various factors influencing particle size, morphology and PL of the phosphors, such as precursor preparation, reaction temperature and heating time, were also investigated. Light-emitting diodes (LEDs) were fabricated with each phosphor and a ∼460 nm emitting InGaN chip. The LEDs from SS, HDHW and CP exhibit strong white emission while those from SC and Pechini emit yellow, revealing that the emission characteristics of LEDs are influenced not only by the morphology and the particle size of the phosphors, but also by the preparing process of the phosphors.