High-temperature thermoelectric studies of A11Sb10 (A=Yb, Ca)

Large samples (6-8 g) of Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀ have been synthesized using a high-temperature (1275-1375 K) flux method. These compounds are isostructural to Ho₁₁Ge₁₀, crystallizing in the body-centered, tetragonal unit cell, space group I4/mmm, with Z=4. The structure consists of antimony dumbbells and squares, reminiscent of Zn₄Sb₃ and filled Skutterudite (e.g., LaFe₄Sb₁₂) structures. In addition, these structures can be considered Zintl compounds; valence precise semiconductors with ionic contributions to the bonding. Differential scanning calorimetry (DSC), thermogravimetry (TG), resistivity (ρ), Seebeck coefficient (α), thermal conductivity (κ), and thermoelectric figure of merit (zT) from room temperature to at minimum 975 K are presented for A₁₁Sb₁₀ (A=Yb, Ca). DSC/TG were measured to 1400 K and reveal the stability of these compounds to ∼1200 K. Both A₁₁Sb₁₀ (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity (∼10 mW/cm K for both Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀) that can be attributed to the complex crystal structure. Yb₁₁Sb₁₀ is a poor metal with relatively low resistivity (1.4 mΩ cm at 300 K), while Ca₁₁Sb₁₀ is a semiconductor suggesting that a gradual metal-insulator transition may be possible from a Ca_11−xYb_xSb₁₀ solid solution. The low values and the temperature dependence of the Seebeck coefficients for both compounds suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.