Disorder broadening of E<sub>2</sub> optical spectra in GeSi alloys期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Disorder broadening of E₂ optical spectra in GeSi alloys

Authors:	J. Humliček F. Lukeš E. Schmidt M.G. Kekoua E. Khoutsishvili

Affiliation:	Department of Solid State Physics, Faculty of Science, J.E. Purkyně University, Kotlá?ská 2, 611 37 Brno, Czechoslovakia;Institute of Metallurgy, Academy of Sciences of the GSSR, Tbilissi, U.S.S.R.

Abstract:	he E₂ transitions in GeSi alloys are analyzed quantitatively using low-field electroreflectance data. The model of M₁ saddle point transitions is found to be in fair agreement with differentiated electroreflectance spectra in the whole composttion range. The broadening parameter of pure Ge and Si increases by 0.035 eV in the alloy with equal content of both components.

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