Temperature dependence of surface electronic structure of Si(111) surface

Temperature dependence of angle-resolved ultraviolet photoelectron spectra has been obtained for Si(111) surfaces starting with a thermally quenched “1 × 1” surface and ending with a high temperature “1 × 1” surface. it has been found that the surface state at 0.8 eV below the Fermi level exhibits degradation with the increase in temperature, which explains the difference of surface electronic structures between a quenched “1 × 1” surface and a high temperature “1 × 1” surface. Electron correlation effect in a dangling-bond derived surface state is postulated as a cause for the phenomenon.