Electrochemical pore formation onto semiconductor surfaces |
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| Affiliation: | 1. Lavoisier Institute of Versailles (UMR CNRS 8180), University of Versailles Saint-Quentin, 45, avenue des Etats-Unis, 78000 Versailles, France;2. Laboratoire chimie Provence (UMR CNRS 6264), Electrochemistry of Materials Research Group, University of Aix-Marseille I–II–III, centre Saint-Jérôme, F-13397 Marseille cedex 20, France |
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| Abstract: | In this paper, a review on electrochemical porous etching of semiconductors is proposed. After a brief history, chemical and electrochemical etching of semiconductors are considered and the pore formation models are discussed. The influences of the key parameters on porous etching are illustrated by listing the numerous pore morphologies reported in the literature. A short inventory of typical applications in various fields is given in the conclusion. |
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