首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Growth,structure and physical properties of single crystals of pure and Pb-doped Bi-based high Tc superconductors
Institution:1. Department of Physics of Condensed Matter (DPMC), University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland;2. Department of Inorganic Chemistry, Ivan Franko National University of L’viv Kyryla i Metodiya str. 6, UA-79005 L’viv, Ukraine
Abstract:Single crystals of (Bi1−xPbx)2Sr2Ca2Cu3O10+δ (x = 0 and 0.16) (sizes up to 3 × 2 × 0.1 mm3) have been grown by means of a newly developed “vapour-assisted travelling solvent floating zone” technique (VA-TSFZ). Post-annealing under high pressure of O2 (up to 10 MPa at T = 500 °C) was applied to enhance Tc (up to 111 K) and improve the homogeneity of the crystals (ΔTc  1 K). The structure of both Pb-free and Pb-doped Bi-2223 was refined for the first time from single crystal X-ray diffraction (XRD) data. The unit cell of the average structure is pseudo-tetragonal with a = 5.4210(7), b = 5.4133(6) and c = 37.010(7) Å, and a = 5.395(1), b = 5.413(1) and c = 37.042(11) Å, for the Pb-free and the Pb-doped phase, respectively. An incommensurate modulation in the direction of one of the short cell vectors has been defined (q  0.21 a1), however, the structure can be conveniently described in a supercell with a fivefold volume (a = 27.105(4) Å). With respect to the “non-modulated” structure, one additional oxygen atom for ten initial O was found to be inserted into the BiO layers. The superconducting anisotropy of Bi-2223 was found to be ∼50, from measurements of the lower critical field. The anisotropy of Bi-2223 is significantly reduced compared to that of Bi-2212, and this accounts for the enhanced irreversibility fields in Bi-2223. Furthermore, Bi-2223 has a higher critical current density, and a reduced magnetic relaxation rate compared to Bi-2212, which are both signatures of more effective pinning in Bi-2223 due to its reduced anisotropy.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号