Terahertz spectroscopy with a Josephson oscillator and a SINIS bolometer |
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| Authors: | M Tarasov L Kuz’min E Stepantsov I Agulo A Kalabukhov M Fominskii Z Ivanov T Claeson |
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| Institution: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow region, 114112, Russia;(2) Moscow State University, Moscow, 119899, Russia;(3) Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, 117333, Russia;(4) Chalmers University of Technology, Gothenburg, Sweden |
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| Abstract: | The voltage response of a thin-film normal-metal hot-electron bolometer based on a SINIS (superconductor-insulator-normal metal-insulator-superconductor) structure to the radiation of a high-temperature Josephson junction in the terahertz frequency region was measured. Bolometers were integrated with planar log-periodic and double-dipole antennas, and Josephson junctions were integrated with log-periodic antennas. Measurements showed that the Josephson junction at a temperature of 260 mK was overheated by the transport current, so that its electron temperature exceeded 3 K at a bias voltage of 1 mV. The maximum response of a bolometer with a double-dipole antenna was observed at a frequency of 300 GHz, which agreed well with the calculated value. The Josephson radiation was observed at frequencies up to 1.7 THz. The voltage response of a bolometer reached 4×108 V/W, and the total noise-equivalent power reached 1.5×10?17 W/Hz1/2. |
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