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Growth Kinetics of GaP Layers in Liquid Phase Electroeptiaxy (LPEE) from Limited and Unlimited Source
Authors:A. I. Ivashchenko  F. Ya. Kopanskaya  G. S. Kuzmenko  I. P. Molodyan
Abstract:
Growth kinetics of GaP layers in two LPEE modifications has been experimentally studied. In the first modification the vapour phase is employed as a source of crystallization. In the second case the losses of the solute during crystallization are not compensated. It has been found that growth kinetics can be treated in the frame work of the model where the growth rate is governed by mass-transport in liquid phase. It's shown that electromigration gives the main contribution to mass-transport at the considered experimental conditions. The quantitative estimations of the effective mass-transport parameters for phosphorus in gallium melt in the range 800 to 1050°C have been obtained.
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