| 电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用 |
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| 引用本文： | 李艳华,潘淼,庞爱锁,武智平,郑兰花,陈朝.电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用[J].发光学报,2011,32(4):378-382. |
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| 作者姓名： | 李艳华 潘淼 庞爱锁 武智平 郑兰花 陈朝 |
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| 作者单位： | 1. 厦门大学 物理与机电工程学院, 福建 厦门 361005;
2. 厦门大学 材料学院, 福建 厦门 361005;
3. 厦门大学 能源研究院, 福建 厦门 361005 |
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| 基金项目： | 福建省科技厅2007年重大科技专项(2007HZ005-2)资助项目 |
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| 摘 要： | 论述了一种利用硅太阳能电池在一定偏压下的电致发光(Electroluminescence,EL)成像来检测硅太阳能电池隐性缺陷的方法.硅太阳能电池的EL波长范围为850～1 200 nm.正向偏压下的EL光强反映了少数载流子的浓度及其扩散长度,而反向偏压下的EL区和发光强度对应于电池的缺陷区域和缺陷密度.用硅CCD相机...
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| 关 键 词： | 硅太阳能电池 EL 隐性缺陷 硅CCD相机 |
| 收稿时间： | 2010-11-04 |
The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells |
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| LI Yan-hua,PAN Miao,PANG Ai-suo,WU Zhi-ping,ZHENG Lan-hua,CHEN Chao.The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells[J].Chinese Journal of Luminescence,2011,32(4):378-382. |
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| Authors: | LI Yan-hua PAN Miao PANG Ai-suo WU Zhi-ping ZHENG Lan-hua CHEN Chao |
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| Institution: | 1. School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China;
2. School of Materials, Xiamen University, Xiamen 361005, China;
3. School of Energy Research, Xiamen University, Xiamen 361005, China |
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| Abstract: | A method of using electroluminescence(EL) imaging to detect the hidden defects in silicon solar cells under the condition of certain bias is presented in this paper.The EL wavelength of silicon solar cells ranges from 850 nm to 1 200 nm.In the case of forward bias,the EL intensity is related to the concentration and diffusion length of minority carriers,but under the reverse bias,EL regime and illumination intensity are corresponding to defect areas and defect density of battery,respectively.The EL of solar... |
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| Keywords: | silicon solar cells electroluminescence hidden defect silicon CCD camera |
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