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Laterally-grown ZnO-nanowire photodetectors on glass substrate |
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| Authors: | WY Weng TJ Hsueh SJ Chang SP Chang CL Hsu |
| Institution: | aInstitute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;bNational Nano Device Laboratories, Tainan 741, Taiwan;cDepartment of Electronic Engineering, National University of Tainan, Tainan 700, Taiwan |
| Abstract: | We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at  360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10−3 A/W with an ultraviolet-to-visible rejection ratio larger than 600. |
| Keywords: | ZnO Nanowires Lateral growth UV photodetector |
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