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Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates |
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| Authors: | Y. Kadoya T. Yoshida H. Noge H. Sakaki Y. Nagamune |
| Affiliation: | a Quantum Transition Project, JRDC, Park Bldg. 4F, Komaba 4-7-6, Meguro-ku Tokyo 153 Japan b Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4-6-1, Meguro-ku Tokyo 153 Japan c Department of Physical Electronics, Faculty of Engineering, Hiroshima University, Kagamiyama 1-chome Higashihiroshima 724 Japan d Asahi Chemical Industry Co. Ltd., Samejima 2-1, Fuji-shi Shizuoka 416 Japan |
| Abstract: | A wire structure with 100 nm scale buried in AlGaAs is shown to be formed spontaneously during the molecular beam epitaxial (MBE) growth of AlGaAs on a pre-patterned substrate. Scanning electron microscope (SEM) and photoluminescence (PL) study revealed that a triangular-shaped wire region with Al content of 0.12 was embedded by Al0.3Ga0.7As with fairly sharp boundaries. The cross-sectional dimensions and the Al molar fraction of the wire are shown to be independent of the patterned mesa width on which the wire structure is grown. |
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