|
|||||
|
|
A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon |
|
| Authors: | ML Gong JX Shi WK Wong KK Shiu WH Zheng KW Cheah |
| Institution: | (1) School of Chemistry and Chemical Engineering, Zhongshan University, Guangzhou 510275, China (Fax: +86-20/8418-9173, E-mail: cesgml@zsu.edu.cn), CN;(2) Department of Chemistry, Hong Kong Baptist University, Hong Kong, China (Fax: +852/2339-7348, E-mail: wkwong@sc11.sci.hkbu.edu.hk), CN;(3) Department of Physics, Hong Kong Baptist University, Hong Kong, China (Fax: +852/2304-6558, E-mail: kwcheah@hkbu.edu.hk), CN |
| Abstract: | 21 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing. Received: 3 September 1998/Accepted: 9 September 1998 |
| Keywords: | PACS: 78 55 -m 78 40-q 81 15 Lm |
| 本文献已被 SpringerLink 等数据库收录！ | |