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The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy |
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| Authors: | F. Gao D. D. Huang J. P. Li Y. X. Lin M. Y. Kong J. M. Li Y. P. Zeng L. Y. Lin |
| Affiliation: | Materials Science Center, Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China |
| Abstract: | Three n–p–n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. |
| Keywords: | GSMBE SiGe alloy Doping SIMS HBT Current gain |
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