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组合刻蚀法制备窄带滤光片列阵
引用本文:王少伟,王利,吴永刚,王占山,刘定权,林炳,陈效双,陆卫.组合刻蚀法制备窄带滤光片列阵[J].光学学报,2006,26(5):46-751.
作者姓名:王少伟  王利  吴永刚  王占山  刘定权  林炳  陈效双  陆卫
作者单位:1. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083
2. 同济大学物理系精密光学工程技术研究所,上海,200092
3. 中国科学院上海技术物理研究所,上海,200083
基金项目:中国科学院资助项目 , 上海市青年科技启明星计划 , 上海市科技攻关项目
摘    要:介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。

关 键 词:光学器件  滤光片  集成  组合刻蚀法  列阵  制备
文章编号:0253-2239(2006)05-0746-6
收稿时间:2005-07-15
修稿时间:2005-09-21

Arrays of Narrow Bandpass Filters Fabricated by Combinatorial Etching Technique
Wang Shaowei,Wang Li,Wu Yonggang,Wang Zhanshan,Liu Dingquan,Lin Bin,Chen Xiaoshuang,Lu Wei.Arrays of Narrow Bandpass Filters Fabricated by Combinatorial Etching Technique[J].Acta Optica Sinica,2006,26(5):46-751.
Authors:Wang Shaowei  Wang Li  Wu Yonggang  Wang Zhanshan  Liu Dingquan  Lin Bin  Chen Xiaoshuang  Lu Wei
Institution:1 .State Laboratory. for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 200083 ;2. Institute of Precise Optical Enginsering and Technology, Department of Physics, Tongji University, Shanghai 200092; 3 .Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 200083
Abstract:The basic mechanism and fabrication processes of the combinatorial etching technique have been introduced. It is a high-efficiency technique for the integration of narrow bandpass filters (NBPFs). A filter array integrated with 2N NBPFs can be fabricated with only N times of etching processes, and the technique can be applied in different wavelength regions. The experimental results of the array integrated with 32 filters in the visible-NIR and the array integrated with 16 filters in the MIR have been demonstrated. The pass-bands of the former NBPFs distribute linearly in the range of 774.7~814.2 nm. All the filters' full widths at half maximum (FWHM) are very narrow and less than 1.5 nm, corresponding to δλ/λ of each filter less than 0.2%. The narrowest FWHM of the integrated filters comes to 0.8 nm with δλ/λ of 0.1% at the wavelength of 794.3 nm. The transmittances of the pass-bands are between 21.2% and 32.4%. Most of them are near 30%.
Keywords:optical devices  filter  integration  combinatorial etching technique  array  fabrication
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