含氮类金刚石薄膜的紫外辐照研究

 用射频等离子体方法在玻璃基底上制备的类金刚石（DLC）薄膜，采用离子注入法掺氮，并对掺氮DLC薄膜紫外（UV）辐照前后的性能变化进行了研究。研究结果表明：随氮离子注入剂量及UV辐照时间的增加，位于2 930cm^-1附近的SP ³C-H吸收峰明显变小，而位于1 580cm^-1附近的SP2C-H吸收峰则明显增强，薄膜的电阻率明显呈下降趋势；随UV辐照时间的增加，位于1 078cm^-1附近的Si-O-Si键数量及位于786cm^-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。

Studies of ultraviolet light irradiation effect on diamond-like carbon(N) films

In the last few years, the study of nitrogen incorporation into diamond-like carbon (DLC)films has received special attention. The DLC films have been deposited on glass substrates using RF plasma deposition method. N ions were introduced by ion implantation, and DLC(N) films were irradiated by ultraviolet light. Using Raman and infrared transimissing spectroscopy, the authors investigated the UV ray irradiation and N ions implantation effect on the structure and properties of DLC(N) films. The study showes that, UV ray and N ions irradiation does intensive damage on SP~3C-H bonds, then leads to the increase of SP~2C-H bonds and the decrease of resistivity obviously. It is clear that UV ray causes the increase of Si-O-Si and Si-C bonds also, i.e. the structure and properties of DLC films had been changed by N ion implantation and UV light irradiation.