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Probe atom dependence of the electric field gradient in bismuth
Authors:H. -E. Mahnke  W. Semmler
Affiliation:1. Hahn-Meitner-Institut für Kernforschung, Berlin GmbH Bereich Kern- und Strahlenphysik, D-1000, Berlin 39, W. Germany
Abstract:
The electric field gradient of T1 in Bi has been determined with the PAD method. The observed value follows the general trend of sp-probe atoms in the group V semimetals in accordance with a covalent bond picture.
Keywords:
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