The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics |
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Authors: | Gong Gu Luxmi PJ Fisher N Srivastava RM Feenstra |
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Institution: | aSarnoff Corporation, 201 Washington Road, Princeton, NJ 08543-5300, USA;bDepartment of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, USA |
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Abstract: | We fabricated high-mobility field-effect transistors based on epitaxial graphene synthesized by vacuum graphitization of both the Si- and C-faces of SiC. Room-temperature field-effect mobilities >4000 cm2/V s for both electrons and holes were achieved, although with wide distributions. By using a high-k gate dielectric, we were able to measure the transistor characteristics in a wide carrier density range, where the mobility is seen to decrease as the carrier density increases. We formulate a simple semiclassical model of electrical transport in graphene, and explain the sublinear dependence of conductivity on carrier density from the view point of the few-layer graphene energy band structure. Our analysis reveals important differences between the few-layer graphene energy dispersions on the SiC Si- and C-faces, providing the first evidence based on electrical device characteristics for the theoretically proposed energy dispersion difference between graphene synthesized on these two faces of SiC. |
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Keywords: | A Nanostructures D Electronic band structure D Electronic transport Field-effect transistors |
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