Gas-phase ion chemistry in the ternary SiH(4)-C(3)H(6)-PH(3) system

Propene-phosphine and the silane-propene-phosphine gaseous mixtures were studied by ion trap mass spectrometry. For the binary mixture the variation of ion abundances under different partial pressures and the mechanisms of ion-molecule reactions are reported. Moreover, the rate constants of the main processes were measured and compared with the collisional rate constants to determine the reaction efficiencies. In the ternary silane-propene-phosphine mixture the mechanisms of formation of Si(m)C(n)P(p)H(+)(s) ion clusters were elucidated, but the complexity of the system and the low abundances of the ions usually isolated by successive steps prevented the determination of rate constants. The hydrogenated ternary ions are mainly formed by reactions of Si(r)P(s)H(+)(t) ions with propene, whereas a minor contribution comes from reactions of Si(m)C(n)H(+)(p) ions with phosphine. The C(v)P(w)H(+)(z) ions show very low reactivity with silane. The formation processes of these species are discussed in relation to their possible role as precursors of amorphous silicon carbides doped with phosphorus obtained by deposition from properly activated silane-propene-phosphine mixtures.