Precise and accurate determination of the stoichiometry of CuInS2 semiconductor material by electrochemical methods |
| |
| Authors: | S C Sheu M L Lee H L Hwang H Y Lin and M H Yang |
| |
| Institution: | (1) Institute of Nuclear Science, National Tsing Hua University, 855 Kuang Fu Road, Hsinchu, Taiwan;(2) Department of Electrical Engineering, National Tsing Hua University, 855 Kuang Fu Road, Hsinchu, Taiwan;(3) Sunlight Electronics Laboratory, Taipei, Taiwan |
| |
| Abstract: | Summary CuInS2 is one of the important I–III–VI2 ternary compounds which has in recent years received increasing interest in semiconductor science. In this study an electrochemical method has been developed based on a limited amount of available sample (0.5–10mg) for the precise and accurate determination of CuInS2 composition. After decomposition of the sample in concentrated HNO3 under pressure, copper and indium were sequentially determined by constant potential coulometry, and sulfur (as sulfate) by amperometric titration. Various experimental parameters which ensure high precision and accuracy of the results were carefully evaluated and calibrated. The overall errors for the determination of copper, indium and sulfur in a 10 mg sample were found to be +0.10%, –0.12% and +0.16%, respectively, which fullfills the requirement for accurate stoichiometric assessment.
Reproduzierbare und genaue Bestimmung der Stöchiometrie von CuInS2-Halbleitermaterial mit Hilfe elektrochemischer Verfahren
Presented at the 10th International Symposium on Microchemical Techniques, August 25–29, 1986, Antwerp, Belgium |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
