氢对GaAs薄膜的钝化作用

报导了射频磁控溅射与沉积气氛掺氢相结合制备单层(13~20 nm厚)高质量GaAs多晶态纳米薄膜的方法,研究了氢钝化对薄膜微观结构及光学性质的影响.对GaAs薄膜进行了X射线衍射、原子力显微镜、吸收光谱、光致荧光谱的研究分析.结果表明,衬底温度500℃的掺氢薄膜和520℃的薄膜呈面心立方闪锌矿结构，薄膜的晶团尺寸较大，微观表面较为粗糙，其吸收光谱出现了吸收边蓝移和明显的激子峰，带隙光致荧光峰强明显增加，说明氢在衬底温度500℃~520℃下对薄膜有重要的钝化作用.

Hydrogen Passivation Effect on GaAs Thin Films

13～20 nm monolayer high quality GaAs thin films have been deposited by radio frequency (RF) magnetron sputtering technique in the atmosphere with hydrogen. The effect of hydrogen passivation on the micro-structure and optical properties of GaAs films was reported. The GaAs thin films were studied by X-ray diffraction,atomic force microscope pattern,absorption and photoluminescence (PL) spectrum.Experimental results show that the GaAs thin films have fcc zinc-blende structure,larger the granular size and more coarseness morphology,when the substrate temperature is at 500℃～520℃ with hydrogen or at 520℃ without hydrogen,a clear exciton hump and blue shift phenomenon were observed in the absorption spectra as well as a stronger peak were found in the PL spectra. These results indicate that hydrogen has passivation effect on GaAs thin films significantly.