| On the binding energies of excitons in polar quantum well structures in a weak electric field |
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| 引用本文： | 吴云峰,梁希侠,BajaK.K.. On the binding energies of excitons in polar quantum well structures in a weak electric field[J]. 中国物理, 2005, 14(11): 2314-2319 |
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| 作者姓名： | 吴云峰 梁希侠 BajaK.K. |
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| 作者单位： | Department of Physics, Inner Mongolia University, Hohhot 010021, China;Department of Physics, Inner Mongolia University, Hohhot 010021, China;Department of Physics, Emory University, Atlanta, GA 30322, USA |
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| 基金项目： | Project supported in part by the National Natural Science Foundation of China (Grant No 10164003) and the Natural Science Foundation of Inner Mongol of China (Grant No 200408020101). |
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| 摘 要： | The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.
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| 关 键 词： | 弱电场 量子结构 能量激发 光学声子 半导体 |
| 收稿时间： | 2005-05-16 |
| 修稿时间： | 2005-05-162005-06-27 |
On the binding energies of excitons in polar quantum well structures in a weak electric field |
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| Wu Yun-Feng,Liang Xi-Xia and K. K. Baja. On the binding energies of excitons in polar quantum well structures in a weak electric field[J]. Chinese Physics, 2005, 14(11): 2314-2319 |
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| Authors: | Wu Yun-Feng Liang Xi-Xia K. K. Baja |
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| Affiliation: | Department of Physics, Emory University, Atlanta, GA 30322, USA; Department of Physics, Inner Mongolia University, Hohhot 010021, China |
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| Abstract: | The binding energies of excitons in quantum wellstructures subjected to an applied uniform electric field by taking into account theexciton longitudinal optical phonon interaction is calculated. The bindingenergies and corresponding Stark shifts for III--V and II--VI compoundsemiconductor quantum well structures have been numerically computed.The results for GaAs/AlGaAs and ZnCdSe/ZnSe quantum wells are given anddiscussed. Theoretical results show that the exciton--phonon couplingreduces both the exciton binding energies and the Stark shifts by screeningthe Coulomb interaction. This effect is observable experimentally and cannotbe neglected. |
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| Keywords: | quantum confined stark effects exciton quantum well |
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