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Recent progress in perpendicularly magnetized Mn-based binary alloy films
Authors:Zhu Li-Jun  Nie Shuai-Hua  Zhao Jian-Hua
Institution:State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:In this article,we review the recent progress in growth,structural characterizations,magnetic properties,and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy.First,we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics,magnetic recording,and permanent magnets applications,and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular magnetic anisotropy.Then,we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl respectively,including their lattice structures,bulk synthesis,epitaxial growth,structural characterizations,magnetic and other spin-dependent properties,and spintronic devices like magnetic tunneling junctions,spin valves,and spin injectors into semiconductors.Finally,we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.
Keywords:spintronics  magnetic material  perpendicular magnetic anisotropy  spin polarized transport insemiconductors
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