Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height |
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| Authors: | Haffouz S Barrios P J Normandin R Poitras D Lu Z |
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| Institution: | Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada. sofiane.haffouz@nrc.ca |
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| Abstract: | An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively. |
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