|
|||||
|
|
Advances in wide bandgap SiC for optoelectronics |
|
| Authors: | Haiyan Ou Yiyu Ou Aikaterini Argyraki Saskia Schimmel Michl Kaiser Peter Wellmann Margareta K Linnarsson Valdas Jokubavicius Jianwu Sun Rickard Liljedahl Mikael Syväjärvi |
| Institution: | 1. Department of Photonics Engineering, Technical University of Denmark, 2800, Lyngby, Denmark 2. Materials of Electronics Energy Technology, University of Erlangen-Nuremberg, 91058, Erlangen, Germany 3. School of Information and Communication Technology, KTH Royal Institute of Technology, 16440, Kista, Sweden 4. Department of Physics, Chemistry and Biology, Link?ping University, 58183, Link?ping, Sweden |
| Abstract: | Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |