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Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode |
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| Authors: | Takeshi Kitatani Masahiko Kondow Koji Nakahara M. C. Larson Kazuhisa Uomi |
| Affiliation: | (1) RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;(2) Central Research Laboratory, Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;(3) Lawrence Livermore National Laboratory, P.O. Box 808, L-222, Livermore, CA, 94550 |
| Abstract: | Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications. |
| Keywords: | semiconductor junction lasers quantum well |
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