Effects of adsorbed bismuth on Si(001) surface electronic states

It is shown that depositing Bi on an Si(001) surface fills the free broken-bond surface states, whose concentration decreases linearly as the bismuth coating 8 increases up to _st, = 0.6 monolayer. The bismuth desorption activation energy is constant < _st, (E_d = 2.77 ± 0.1 eV) and decreases for > _st.Taras Shevachenko Kiev National University, ul. Vladimirskaya 64, 252601 Kiev-17, Ukraine. Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 32, No. 3, pp. 168–171, May–June, 1996. Original article submitted September 19, 1995.