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| 砷化镓探测器的镉上中子辐照改性 | |
| 引用本文： | 杨洪琼 杨建伦. 砷化镓探测器的镉上中子辐照改性[J]. 强激光与粒子束, 1994, 6(3): 430-436 |
| 作者姓名： | 杨洪琼 杨建伦 |
| 作者单位： | 西南核物理与化学研究所 |
| 基金项目： | 中国工程物理研究院科学基金 |
| 摘 要： | 介绍反应堆镉上中子辐照改性的掺铬砷化镓（ＧａＡｓ：Ｃｒ）和本征砷化镓（ＧａＡｓ）光电导探测器，研究了探测器的响应时间、粒子灵敏度及输出电流随镉上中子辐照改性注量和施加偏压的变化关系。 |
| 关 键 词： | 探测器 砷化镓 中子辐射 辐射改性 nuclear detector GaAs:Cr and GaAs neutron-treated |
MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAION |
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| Yang Hongqiong,Yang Jianlun and Wang Huifang. MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAION[J]. High Power Laser and Particle Beams, 1994, 6(3): 430-436 | |
| Authors: | Yang Hongqiong Yang Jianlun Wang Huifang |
| Abstract: | This paper reported the modification of Gr-doped GaAs and undoped Ga As photoconductor by neutron(above Cadmium)-treated.The exporimental results showed that the relations of the response time,the sensitivity to particle,and the output current of photoconductors with neutron-treated flux and bias voltages of he detectors. |
| Keywords: | nuclear detector GaAs:Cr and GaAs neutron-treated |
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