Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1) |
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Authors: | Toshiharu Morimura Takahiro Mori Meoung-Whan Cho Takashi Hanada Takafumi Yao |
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Institution: | a Center for Interdisciplinary Research (CIR), Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;b Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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Abstract: | We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions. |
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Keywords: | InGaAs Reflectance difference spectroscopy (RDS) Reflectance anisotropy spectroscopy (RAS) Molecular beam epitaxy (MBE) Atomic force microscopy (AFM) Surface morphology Low temperature growth |
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