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Time-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistorsTime-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistors |
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| Authors: | Ma Xiao-Hua Jiang Yuan-Qi Wang Xin-Hua Lii Min Zhang Huo Chen Wei-Wei Liu Xin-Yu |
| Affiliation: | ( School of Advanced Materials and Nanotechnology, Xidian University, Xi＇ an 710071, China 2. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 71007 l, China 3. Key Laboratory of Microelectronics Device ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China) |
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