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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors |
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| Institution: | [1]school of Physics, Shandong University, Jinan 250100, China [2]Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
| Abstract: | In0.18A10.82N/AIN/GaN heterostructure field-effect transistors, channel electric field distribution,polarization Coulomb field scattering, two-dimensional electron gas mobility |
| Keywords: | In0 18A10 82N/AIN/GaN heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering two-dimensional electron gas mobility |
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